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Strain transducers insensitive to transverse and shear strains
Strain transducers insensitive to transverse and shear strains
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机译:应变传感器对横向和剪切应变不敏感
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1,059,074. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. March 24, 1964 [March 29, 1963], No. 12303/64. Heading HIK. A piezo-resistive strain gauge comprising a wafer of semi-conductor material having a cubic crystal structure is made insensitive to transverse and shear strains by choosing the orientation of the plane of the wafer in relation to the crystal lattice according to one of three given formulµ which express this orientation in terms of the piezo-resistive and compliance coefficients of the material. One of the formulµ relates to current measurement in the plane of the wafer and the other two relate to current measurement perpendicular to this plane. Specific examples are given for N and P type germanium, silicon, and lead telluride.
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机译:1,059,074。半导体器件。 WESTERN ELECTRIC CO。Inc.,1964年3月24日[1963年3月29日],编号12303/64。标题HIK。通过根据给定的三个公式之一选择晶片平面相对于晶格的取向,可以使包括具有立方晶体结构的半导体材料晶片的压阻应变仪对横向应变和剪切应变不敏感。用材料的压阻和柔度系数表示这种取向。公式之一涉及晶片平面中的电流测量,另外两个涉及垂直于该平面的电流测量。给出了N和P型锗,硅和碲化铅的具体示例。
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