首页> 外国专利> method for feinreinigung of gallium, indium, zinc, cadmium, beryllium, boron, germanium, tin, lead, arsenic, antimony, bismuth, selenium and tellurium

method for feinreinigung of gallium, indium, zinc, cadmium, beryllium, boron, germanium, tin, lead, arsenic, antimony, bismuth, selenium and tellurium

机译:镓,铟,锌,镉,铍,硼,锗,锡,铅,砷,锑,铋,硒和碲的微量还原方法

摘要

Ultra-pure Zn, Cd, Ga, In, Ge, Sn, As, Sb or Bi are prepared from the corresponding impure element by converting the impure element into a corresponding alkyl or alkyl hydride derivative and decomposing it to deposit the desired ultra-pure element. The alkyl or alkyl hydride derivative may be purified before decomposition by fractional or steam distillation, zone melting or recrystallization. For example, gallium alkyls such as tri-propyl/ butyl-gallium may be heated at 180-200 DEG C. under an inert atmosphere in a quartz flask fitted with a condenser, the separated metallic gallium being freed from any alkyl-Ga by washing with n-hexane which is later decanted off. An indium regulus may be obtained by heating tri-ethyl/propyl/butyl-indium at 180 DEG C. under a nitrogen atmosphere. Crystalline antimony may be grown on an internally heated quartz rod or cylindrical graphite from the vapour of tri-ethyl/propyl/butyl-antimony. Similarly tin may be deposited on a quartz rod from tetra-ethyl/butyl tin. Other examples specify compounds of triethylbismuth diethylcadmium and diethylzinc. Specification 981,685 is referred to.
机译:通过将不纯元素转化为相应的烷基或烷基氢化物衍生物并将其分解以沉积所需的超纯,可以从相应的不纯元素制备超纯Zn,Cd,Ga,In,Ge,Sn,As,Sb或Bi。元件。可以在分馏或蒸汽蒸馏,区域熔融或重结晶分解之前纯化烷基或烷基氢化物衍生物。例如,在惰性气氛下,在装有冷凝器的石英烧瓶中,将烷基镓如三丙基/丁基镓在180-200℃下加热,分离出的金属镓可通过洗涤除去任何烷基-Ga。用正己烷将其倒出。铟含量可以通过在氮气氛下在180℃下加热三乙基/丙基/丁基铟来获得。结晶锑可以从三乙基/丙基/丁基锑的蒸气中在内部加热的石英棒或圆柱形石墨上生长。类似地,锡可以由四乙基/丁基锡沉积在石英棒上。其他实例说明三乙基铋二乙基镉和二乙基锌的化合物。参考规格981685。

著录项

  • 公开/公告号AT253235B

    专利类型

  • 公开/公告日1967-03-28

    原文格式PDF

  • 申请/专利权人 SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT;

    申请/专利号AT609261

  • 发明设计人

    申请日1961-08-07

  • 分类号

  • 国家 AT

  • 入库时间 2022-08-23 14:27:28

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