首页> 外国专利> Cellula de memoria rapida de diodo-tunel. (Machine-translation by Google Translate, not legally binding)

Cellula de memoria rapida de diodo-tunel. (Machine-translation by Google Translate, not legally binding)

机译:二极管隧道快速存储单元。 (通过Google翻译进行机器翻译,没有法律约束力)

摘要

"Fast diode-tunnel memory cell", constructed with the purpose of serving, each unit, as a record of misalignment and, together with others equal to it, as a counting ring, characterized by the fact that this diode-tunnel, whose anode is to the mass and the polarized cathode for said diode to have two stable states, it is connected, on the one hand, directly to the entrance of the cell and, on the other hand, to the exit thereof by means of two switching diodes in series , arranged in the same direction, the cathode of the first of these switching diodes being connected to the cathode of the tunnel diode and the common point being connected to these switching diodes to the cathode of an accumulation effect diode constituting an excitation organ. . (Machine-translation by Google Translate, not legally binding)
机译:“快速二极管隧道存储单元”,旨在将每个单元用作未对准的记录,并与其他等同单元用作计数环,其特征在于该二极管隧道的阳极对于所述二极管具有两个稳定状态的质量和极化阴极,它一方面直接连接到电池的入口,另一方面通过两个开关二极管连接到电池的出口。在相同方向上串联布置,这些开关二极管中的第一个的阴极连接到隧道二极管的阴极,并且公共点连接到这些开关二极管的构成激励机构的累积效应二极管的阴极。 。 (通过Google翻译进行机器翻译,没有法律约束力)

著录项

  • 公开/公告号ES324968A1

    专利类型

  • 公开/公告日1967-04-01

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号ES19660324968

  • 发明设计人

    申请日1966-03-31

  • 分类号G11C11/38;G11C19/28;H03K3/315;H03K3/33;

  • 国家 ES

  • 入库时间 2022-08-23 14:23:57

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