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process for the production of sintered or a consolidated melt existing items, in particular from kieselsaeure

机译:烧结或固结熔体的生产方法,特别是从硅藻土生产的现有产品

摘要

1276855 Fused silica TEXAS INSTRUMENTS Inc 12 June 1969 [10 July 1968] 29851/69 Heading C1M A fused silica crucible, suitable for pulling monocrystalline silicon from a pure silicon melt, is made by supporting on a mandrel a crucible form produced by vapour phase flame hydrolysis of silicon tetrachloride, heating to a presintering temperature in the range 1000‹ to 1300‹ C. in vacuum to substantially free the silica of water and then heating at a sintering temperature in the range 1300‹ to 1500‹ C. and cooled in a helium atmosphere to form a transparent fused silica crucible. Preferably the mandrel is of graphite and has a generally cylindrical portion and a symmetrically curved closed end portion. The crucible form may consist of silicon dioxide particles of diameter in the range 0À01 to 0À1 micron. The presintering may be carried out at a pressure of 0À01 to 10 millimetres of mercury for such a time that the final crucible has an infra-red transmittance of substantially 63% at 2À73 microns.
机译:1276855熔融石英TEXAS INSTRUMENTS Inc 1969年6月12日[1968年7月10日] 29851/69标题C1M一种熔融石英坩埚,适用于从纯硅熔体中拉出单晶硅,是通过将由气相火焰产生的坩埚支撑在心轴上制成的水解四氯化硅,在真空中加热到1000到1300摄氏度的预烧结温度以基本除去二氧化硅,然后在1300到1500摄氏度的烧结温度下加热并在在氦气中形成透明的熔融石英坩埚。优选地,心轴是石墨的,并且具有大体上圆柱形的部分和对称弯曲的封闭端部。坩埚形式可以由直径在0‑01至0‑1微米范围内的二氧化硅颗粒组成。预烧结可以在0至1至10毫米汞柱的压力下进行,使最终的坩埚在2至73微米的红外透射率达到63%。

著录项

  • 公开/公告号DE000001932626A

    专利类型

  • 公开/公告日1970-06-18

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INC;

    申请/专利号DE1932626A

  • 发明设计人 ANDREW CARRELL MICHAEL;

    申请日1969-06-27

  • 分类号C04B33/32;

  • 国家 DE

  • 入库时间 2022-08-23 10:51:35

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