METHOD OF FABRICATING SEMICONDUCTOR DEVICE WHICH INCLUDES REGION IN WHICH MINORITY CARRIERS HAVE SHORT LIFETIME

• 1. 半导体器件中实现载流子寿命控制的结构及其制造方法 [P] . 中国专利： CN103456771B . 2016.12.28
• 2. 半导体器件中实现载流子寿命控制的结构及其制造方法 [P] . 中国专利： CN103456771A . 2013-12-18
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  机译： 半导体设备所在的地区具有不同的少数族裔运营商的预选时间

• 4. Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices [P] . 欧洲知识产权局专利： EP0945733A3 . 2002-12-18

  机译： 半导体器件中少数载流子扩散长度和少数载流子寿命的无损测量方法

• 5. Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices [P] . 美国专利： US6346821B1 . 2002-02-12

  机译： 半导体器件中少数载流子扩散长度和少数载流子寿命的无损测量方法

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