首页> 外国专利> INTERFERENCE-FREE MULTIVIBRATOR SWITCHING CIRCUIT USING SATURATED UNDOPED TRANSISTORS WITH LARGE BASE-TO-EMITTER CAPACITY

INTERFERENCE-FREE MULTIVIBRATOR SWITCHING CIRCUIT USING SATURATED UNDOPED TRANSISTORS WITH LARGE BASE-TO-EMITTER CAPACITY

机译:使用饱和的无悬臂晶体管和大基到电容的无干扰多振子开关电路

摘要

1,169,110. Multivibrator. WILMOT-BREEDEN Ltd. 16 May, 1968 [14 June, 1967], No. 27400/67. Heading H3T. In a multivibrator, such as a bi-stable, having transistors 10, 11 which alternately saturate and cut off, the base current of each saturated transistor is at least five times the value required to just saturate it in the worst conditions, and the transistors have a large emitter to base capacity when saturated and have undoped emitter-base regions to prevent internal leakage of any stored charge. Discharge of the capacity when a transistor turns off is through the external base circuit. A saturation time constant of 1 Ás is achieved which is a comprise between immunity from interference and speed of switching. The circuit may be integrated. The value of the base current required to just saturate the transistor in the worst conditions is the maximum collector current of the saturated transistor divided by the minimum physically realizable common emitter current gain, and the operating base current is preferably between five and ten times this value.
机译:1,169,110。多谐振荡器。 WILMOT-BREEDEN Ltd. 1968年5月16日[1967年6月14日],第27400/67号。标题H3T。在诸如双稳态的多谐振荡器中,它具有交替饱和和截止的晶体管10、11,每个饱和晶体管的基极电流至少是在最坏条件下使其饱和所需的值的五倍。饱和时具有大的发射极至基极电容,并具有未掺杂的发射极-基极区,以防止任何存储电荷的内部泄漏。晶体管关闭时,电容的放电通过外部基本电路进行。达到1 s的饱和时间常数,该常数介于抗干扰能力和开关速度之间。该电路可以被集成。在最坏条件下仅使晶体管饱和所需的基极电流值是饱和晶体管的最大集电极电流除以最小的可物理实现的共发射极电流增益,并且工作基极电流最好在此值的五到十倍之间。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号