METHOD FOR PREPARING ALKOXY DERIVATIVES OF SILICON GERMANIUM TIN THALLIUM AND ARSENIC

• 1. 一种乙烯基硅锗锡烷衍生物的制备方法 [P] . 中国专利： CN109021003B . 2021.06.01
• 2. 一种乙烯基硅锗锡烷衍生物的制备方法 [P] . 中国专利： CN109021003A . 2018-12-18
• 3. Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer [P] . 美国专利： US7217322B2 . 2007-05-15

  机译： 制备外延硅锗层的方法和包括外延砷原位掺杂的硅锗层的集成半导体器件

• 4. Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer [P] . 美国专利： US2005098093A1 . 2005-05-12

  机译： 制备外延硅锗层的方法和包括外延砷原位掺杂的硅锗层的集成半导体器件

• 5. METHOD FOR FORMING SILICON-GERMANIUM STRESSOR WITH THE HIGH GERMANIUM CONCENTRATION, CAPABLE OF FORMING THE SILICON-GERMANIUM STRESSOR FROM A SECOND SILICON-GERMANIUM LAYER BY IMPLEMENTING A HEAT DIFFUSION PROCESS [P] . 韩国专利： KR20110011573A . 2011-02-08

  机译： 高锗浓度形成硅锗应力的方法，该方法能够通过实施热扩散过程而由第二硅锗层形成硅锗应力

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• 2. Selective area chemical vapor deposition of epitaxial silicon-germanium thin films by the alternating cyclic method. [D] . Soman, Ravindra Govind. 1999
• 3. Silicon-based silicon–germanium–tin heterostructure photonics [O] . Richard Soref -1
• 4. Studies of the Derivatives of Epichlorohydrin. III. A New Method of Preparing γ-Alkoxy-γ-butyrolactones [O] . Tsunehiko Kuwamura, Hideo Takahashi 1969

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• 6. 1-α(β)取代基-β三芳基锗基丙酰氧基-2.8.9-三氧杂-5-氮杂-1-锡杂三环3,3,3,0<'1.5>十一碳烷的研究 [C] . 宋雪清 . 第十届金属有机化学讨论会 . 1998
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