Low temperature production of amorphous boron-carbon

摘要

Process comprises placing a substrate in a vacuum chamber at =25 torr pref. to about 5mm Hg abs., heating the substrate to 500-1000 degrees C, pref. is approx. 850 degrees C, and contacting the substrate with a gaseous mixture of acetylene and a boron hydride, especially diborane. - The gas mixture pref. contains in addition, hydrogen, and a particular composition in 3 pts. acetylene, 2 pts. hydrogen and 12 pts. diborane. - The substrate may be silica or glass, suitably employed as a continuous filament passing through the vacuum chamber. - The amorphous deposits have high tensile strength and elastic moculus even at high temperature.