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Word selection technique

机译:选词技巧

摘要

997,869. Circuits employing bi-stable magnetic elements. THOMPSON RAMO WOOLDRIDGE Inc. July 30, 1963 [Aug. 2, 1962], No. 30231/63. Heading H3B. [Also in Division G4] In a word-organized memory, a word is selected by an arrangement comprising an array of switches connected respectively to the individual word lines, a single current source connected to all the switches being effective only via selected switch to energize the associated word line. A second array of switches may be provided, each word line being connected to a unique pair of switches, one from each array, Fig. 3. As described, a memory comprises four banks B1-B4 each containing 16 magnetic cores arranged in four word lines. The address of a required word in the memory is set up as four bits WXYZ (= 1101, as shown) in an address register 10, bits YZ selecting one of the four banks B1-B4 via a bank select switch array 20 and bits WX selecting one of the four word lines within a bank via a word select switch array 22. Fig. 4 shows the word select switch array 22 in more detail, the bank select switch array 20 being similar. The word select switch 22 comprises four cores 1-4 each having a bias winding 42; W and X switching windings 46, 44; a read winding 30 and write winding 32. In operation, assuming that the word address is 1101, word select core 4 and bank select core 4 will be switched via decoding matrices such as 34, thereby inducing a voltage in the read output winding 30 of word select core 4 to forward bias a diode 26 associated therewith. After a 0-2 Ás delay a current source I RS is energized to pass a read current I R through the selected word line to read out the selected word to a data register, Fig. 3. The data read out can be re-written when the word select core 4 and bank select core 4 are reset by the bias since diode 28 is then forward biased and if, after a 0À2 Ás delay, current source I ws is energized, a write current I w is passed along the selected word line to write the data stored in the data register, Fig. 3, into the cores of the selected word. In the same way fresh data can be written into the memory.
机译:997,869。采用双稳态磁性元件的电路。汤普森·拉莫·伍尔德里奇(Thompson RAMo WOOLDRIDGE Inc。),1963年7月30日[八月。 [1962年2月],第30231/63号。标题H3B。 [也在G4分部中]在有字组织的存储器中,通过包括分别连接到各个字线的开关阵列的布置来选择一个字,连接到所有开关的单个电流源仅通过选择的开关通电才有效相关的字线。可以提供第二开关阵列,每个字线连接到一对唯一的开关,每个阵列中的一对,如图3所示。存储器包括四个存储体B1-B4,每个存储体包含以四个字排列的16个磁芯。线。存储器中所需字的地址设置为地址寄存器10中的四位WXYZ(如图所示,= 1101),位YZ通过存储体选择开关阵列20选择四个存储体B1-B4之一,而位WX通过字选择开关阵列22选择存储体中的四个字线之一。图4更详细地示出了字选择开关阵列22,存储体选择开关阵列20是相似的。字选择开关22包括四个芯1-4,每个芯具有偏置绕组42;每个芯具有偏置绕组42。 W和X开关绕组46、44;在操作中,假设字地址为1101,字选择核心4和存储体选择核心4将通过解码矩阵(例如34)进行切换,从而在读取输出绕组30中感应电压。字选择芯4正向偏置与其相关的二极管26。在0-2 ss延迟后,电流源I RS通电,以使读取电流IR通过所选字线,以将所选字读出到数据寄存器中,如图3所示。字选择核心4和存储体选择核心4被偏置复位,因为二极管28随后被正向偏置,如果在0?2 s延迟后,电流源I ws通电,则写入电流I w沿着所选字线通过将存储在图3数据寄存器中的数据写入所选字的核心。同样,可以将新数据写入内存。

著录项

  • 公开/公告号JPS4929767B1

    专利类型

  • 公开/公告日1974-08-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19630040338

  • 发明设计人

    申请日1963-08-02

  • 分类号G11C15/00;

  • 国家 JP

  • 入库时间 2022-08-23 06:21:40

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