PROCESS FOR ETCHING COMPOSITE LAYERED STRUCTURES INCLUDING A LAYER OF FLUORIDE-ETCHABLE SILICON NITRIDE AND A LAYER OF SILICON DIOXIDE

公开/公告号JPS4940844B1

专利类型

公开/公告日1974-11-06

原文格式PDF

申请/专利号JP19690103083

申请日1969-12-23

分类号C04B41/91;C01B21/068;C01B33/12;H01L21/033;H01L21/308;H01L21/311;

国家 JP

入库时间 2022-08-23 06:19:46