Doping cadmium telluride crystals - with gallium/indium/aluminium by soln zone melting

摘要

Pure crystalline CdTe compsn. is doped by contact with a discrete Te layer contg. a dopant and melting to form a soln. zone, heating being directed so that the soln. zone passes through the compsn. and CdTe dissolves continuously on one side and recrystallises on the opposite side of the zone. The prod. is esp. useful for high-temp. semiconductors or solar cells. Good regulation of the amt. of dopant and prodn. of more highly doped zones are possible. The soln. zone is kept at 500-800 degrees C and is 0.5-2 cm wide.