首页> 外国专利> METHOD OF GROWING 1-0-0 ORIENTATION HIGH PERFECTION SINGLE CRYSTAL SILICON BY ADJUSTING A FOCUS COIL

METHOD OF GROWING 1-0-0 ORIENTATION HIGH PERFECTION SINGLE CRYSTAL SILICON BY ADJUSTING A FOCUS COIL

机译:通过调节焦点线圈生长1-0-0取向高折射率单晶硅的方法

摘要

Silicon monocrystals having a 1-0-0 crystallographic orientation are prepared using a crystal growing apparatus of the float zone type having a heating coil and upper and lower focusing coils, wherein the silicon feed bar is held upright and moved downward as the monocrystal rod is formed. After the stem of the monocrystal has been grown, the lower focusing coil is lowered slightly, thus producing a condition more conducive to the formation of the 1-0-0 crystalline structure.
机译:使用具有加热线圈和上下聚焦线圈的浮区型晶体生长装置制备具有1-0-0晶体取向的硅单晶,其中硅进料棒保持直立并随着单晶棒的移动而向下移动。形成。单晶茎生长后,下部聚焦线圈略微降低,从而产生了更有利于1-0-0晶体结构形成的条件。

著录项

  • 公开/公告号US3776703A

    专利类型

  • 公开/公告日1973-12-04

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INCUS;

    申请/专利号USD3776703

  • 发明设计人 VALANT GUS;GUFFEY HUS;

    申请日1970-11-30

  • 分类号B01J17/18;

  • 国家 US

  • 入库时间 2022-08-23 05:04:15

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