Semiconductor devices are provided in which a vitreous support member such as translucent glass plate serves as a principal support member for the semiconductor body of the device. One or more metallized paths are provided on a face of the vitreous support member which serves as a sealing surface. A major face of the semiconductor body equipped with one or more conductive contacts are provided, if desired, with an insulative and passivating layer, through which the contacts are exposed, is situated in confronting contacting relation with the vitreous support member and so arranged that the semiconductor body contacts register with the metallized paths on the vitreous support member. The vitreous support member and semiconductor body are permanently united by a thermo-electrostatic bond formed by heating to a temperature in the range of about 300-450 DEG C and application of an electrostatic field of about 200-500 volts d.c. and a magnetic field having a flux density of about 3,000 to 20,000 gauss, such thermo-electrostatic bond also permanently uniting the metallized paths to the support member and to the semiconductor body, as well as permanently uniting the contacts on the semiconductor body to the metallized paths.
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