Aluminium-tantalum resistance films prodn. - by reactive sputtering in nitrogen or oxygen, for thin film circuits, resistors, condensers

摘要

In the prodn. of Al-Ta alloy resistance films, for thin film circuits and discrete resistors and condensers, by application to a non-conducting substrate in vacuo and using 2-20 atom-% Ta in the Al, reactive sputtering is carried out in an atmos. with a partial pressure of N2 and/or O2 between 10-1 and 10-2 Pa. The film can then be tempred at ca. 400 degrees C. or ca. 550 degrees C. The use of this atmos. gives films of even better stability than other Al-Ta alloy films and allows the temp. coefft. of resistance (TKR) and/or the specific resistance to be adjusted in a wide range.