Microwave surface resistance of reactively sputtered NbN thin films

摘要

The surface resistance of niobium nitride (NBN) thin films was measured at 7.78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TE sub 011 mode of a lead-plated copper cavity where the NbN served as one end-cap of the cavity.