首页> 外国专利> ADMITTANCE-MATCHING NETWORK FOR THE PARALLEL CONNECTION OF WIDE-BAND ACTIVE POWER ELEMENTS

ADMITTANCE-MATCHING NETWORK FOR THE PARALLEL CONNECTION OF WIDE-BAND ACTIVE POWER ELEMENTS

机译:宽带有源功率元件并联连接的准入匹配网络

摘要

1384942 Admittance matching network THOMSON-CSF 13 April 1972 [13 April 1971] 17179/72 Heading H3U An admittance matching network connecting an input port to n(n1) output ports comprises p(p1) stages of four terminal network units, F 1 , F 2 , each stage comprising groups of q(q1) such networks, the q networks of each group having their inputs connected in parallel to one of the networks of the preceding stage, so that n = qSPp/SP. In Fig. 2, p = q = 2. Balancing resistors U between outputs may be provided, to compensate for unequal characteristics amongst the n loads. A network unit may comprise an L-C circuit, Fig. 3 (not shown), or a capacitor or transistor together with a wire contributing inductance. Integrated circuit embodiment, Figs. 5, 6 (not shown).-An earthed heat sink (48) supports an input capacitor (C1) of ceramic, thin film or metal oxide semi-conductor construction connected to capacitors (C 2 , C 3 ) of similar construction and thence to the bases of transistors (T 1 -T 4 ), whose emitters are earthed to heat sink (48), via leads (51-54), network units comprising: C 2 , M; C 3 , N; input capacitances of (T 1 -T 4 ) and (43-46) respectively. Balancing resistor (42) is formed by vaporization, or doping impurities on a semi-conductor. The transistors are formed on beryllium oxide substrate (47). Stray inductance of leads (M, N, 43-46) thus play an essential part in determining the network unit characteristics. The loads may comprise transistor amplifiers, avalanche oscillators, or gunn diodes.
机译:1384942导纳匹配网络THOMSON-CSF 1972年4月13日[1971年4月13日]标题H3U将输入端口连接到n(n> 1)个输出端口的导纳匹配网络包括四个终端网络单元的p(p> 1)级,F 1,F 2,每个级包括q(q> 1)个这样的网络组,每组的q个网络的输入并联连接到前一级的网络之一,因此n = q p 。在图2中,p = q =2。可以在输出之间提供平衡电阻U,以补偿n个负载之间的不相等特性。网络单元可以包括图3所示的L-C电路(未显示),或者包括电容器或晶体管以及贡献电感的导线。集成电路实施例,图1和2。图5、6(未显示)。-接地的散热器(48)支撑一个陶瓷,薄膜或金属氧化物半导体结构的输入电容器(C1),并连接至结构类似的电容器(C 2,C 3),因此网络单元通过导线(51-54)连接到晶体管(T 1 -T 4)的基极,其发射极通过导线(51-54)接地到散热器(48),该网络单元包括:C 2,M; C 3,N;输入电容分别为(T 1 -T 4)和(43-46)。平衡电阻器(42)是通过汽化或在半导体上掺杂杂质而形成的。晶体管形成在氧化铍衬底(47)上。因此,导线的杂散电感(M,N,43-46)对于确定网络单元的特性起着至关重要的作用。负载可以包括晶体管放大器,雪崩振荡器或耿氏二极管。

著录项

  • 公开/公告号GB1384942A

    专利类型

  • 公开/公告日1975-02-26

    原文格式PDF

  • 申请/专利权人 THOMSON-CSF;

    申请/专利号GB19720017179

  • 发明设计人

    申请日1972-04-13

  • 分类号H03H7/48;H03H7/38;H03H13/00;

  • 国家 GB

  • 入库时间 2022-08-23 03:41:21

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