The semiconductor device consists of at least four layers of alternating conductivity forming pn-junctions and a pattern of electric connections between each intermediate layer coupled to a gate electrode. Each pattern contains at least two groups of electric connections, one pattern group being provided near to the gate electrode. The connections of this group have relatively greater dimensions than those of the connections of the remaining groups. They are spaced from the gate electrode edge by a distance exceeding their dimensions. The remaining connections are of smaller dimensions but their numbers per surface unit are higher. The outer layers are provided with electrodes carrying the main current of the device, the gate electrode being provided on the intermediate layer.
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