首页> 外国专利> H.F. modulatable semiconductor laser - has external light source whose light beam wavelength is injectable into laser active zone

H.F. modulatable semiconductor laser - has external light source whose light beam wavelength is injectable into laser active zone

机译:高频可调节半导体激光器-具有外部光源,其光束波长可注入激光有源区

摘要

The pulse modulated semiconductor laser has an external light source whose radiation has a given intensity and a wavelength approximating to that of the output beam from the semiconductor laser. This external radiation is injected into an active zone of the semiconductor laser, and may itself originate from a second laser with roughly the same crystal structure as the pulse modulated semiconductor laser. The injection laser (12) and the pulse modulated laser (11) may be provided on the same substrate and separated by a slot (4) across which light from the injection laser passes into the active zone of the pulse modualted laser.
机译:脉冲调制半导体激光器具有外部光源,该外部光源的辐射具有给定的强度,并且其波长近似于半导体激光器的输出光束的波长。该外部辐射被注入到半导体激光器的有源区中,并且其自身可能源自具有与脉冲调制半导体激光器大致相同的晶体结构的第二激光器。注入激光器(12)和脉冲调制激光器(11)可以设置在同一基板上并且由狭缝(4)隔开,狭缝(4)使来自注入激光器的光穿过狭缝(4)进入脉冲调制激光器的有源区域。

著录项

  • 公开/公告号DE2537569A1

    专利类型

  • 公开/公告日1976-03-11

    原文格式PDF

  • 申请/专利权人 NIPPON ELECTRIC CO.LTD.;

    申请/专利号DE19752537569

  • 发明设计人 LANGROY;KOBAYASHIKOHROH;

    申请日1975-08-22

  • 分类号H01S3/10;

  • 国家 DE

  • 入库时间 2022-08-23 01:59:53

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