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INTEGRATED BUFFER CIRCUITS FOR COUPLING LOW-OUTPUT IMPEDANCE DRIVER TO HIGH-INPUT IMPEDANCE LOAD

机译:集成缓冲电路,用于将低输出阻抗驱动器耦合到高输入阻抗负载

摘要

The combination in a common substrate, of a lateral bipolar transistor operated in the common base mode and a field-effect transistor whose source (or drain) electrode is the collector electrode of said bipolar transistor. A signal applied to the emitter of the bipolar transistor causes a current to flow through the conduction channel of the field-effect transistor. The voltage thereby developed at the electrode common to both transistors, even in response to a small signal current, is of sufficient amplitude to drive a high-input impedance load such as other field-effect transistors embedded in the same substrate.
机译:在公共衬底中,以公共基极模式工作的横向双极晶体管和场效应晶体管的组合,其源极(或漏极)电极是所述双极晶体管的集电极。施加到双极晶体管发射极的信号使电流流过场效应晶体管的导通通道。由此,即使响应较小的信号电流,在两个晶体管共用的电极上产生的电压也具有足够的振幅,以驱动高输入阻抗负载,例如嵌入在同一基板中的其他场效应晶体管。

著录项

  • 公开/公告号FR2061722B1

    专利类型

  • 公开/公告日1976-10-29

    原文格式PDF

  • 申请/专利权人 RCA CORP;

    申请/专利号FR19700033465

  • 发明设计人

    申请日1970-09-15

  • 分类号H01L19/00;H03F1/00;

  • 国家 FR

  • 入库时间 2022-08-23 01:55:21

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