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• 1. 具有减少扩散热阻的半导体堆叠组合件及其制造方法 [P] . 中国专利： CN101978493B . 2013.09.04
• 2. 具有减少扩散热阻的半导体堆叠组合件及其制造方法 [P] . 中国专利： CN101978493A . 2011-02-16
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  机译： 诉讼旨在防止或减少具有自发性正电子的半导体中的扩散或自吸

• 4. proceedings act to prevent or reduce the diffusio or autodrogaggio at or impurity in semiconductor with a positive spontaneous [P] . IT947673B . 1973-05-30

  机译： 诉讼旨在防止或减少具有自发性正电子的半导体中的扩散或自吸

• 5. proceedings act to prevent or reduce the diffusio or autodrogaggio at or impurity in semiconductor with a positive spontaneous [P] . 法国专利： FR2133598A1 . 1972-12-01

  机译： 诉讼旨在防止或减少具有自发性正电子的半导体中的扩散或自吸

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• 7. Experimental observation of spontaneous spin polarization of electrons in hybridized states of transition element impurities in semiconductors [O] . Okulov, V. I., Govorkova, T. E., Zhevstovskikh, I. V., 2013

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