Halogen-doped cadium telluride - by zone melting, for (gamma) radiation-sensitive materials and high temp semiconductors

摘要

Pure crystalline CdTe compsn. is doped by contact with a discrete layer of Te contg. CdCl2, CdBr2 or CdI2 and melting to form a soln. zone., heating being directed so that the soln. zone passes through the compsn. CdTe dissolves continuously on one side and recrystallises on the other side of the zone. This material is radiation sensitive and is useful as high temp. semiconductor, solar cell or material sensitive to gamma-radiation. Simple quantitative regulation of doping is possible. The amt. of dopant dissolved in the Te layer is such that the end prod. has a halogen content of 1.0-0.0001 ppm (wt.). The soln. zone passes through the compsn. at a rate is not 0.9 cm/day and the soln. zone is kept at 500-800 degrees C.