Pure boron prepn. by redn. at high temp - of transition metal boride in chamber lined with boride

摘要

Pure boron is obtd. by redn. of a boron cpd. at 1200 degrees C (1000-1100 degrees C) as described in the parent patent, whereby the reaction is effected in a fluidised bed chamber made of or lined with a transition metal boride esp. ZrB2 or TiB2. Loss of B by reaction with the matl. of the chamber is avoided, (Mo in the parent patent).