Method and apparatus for measurement of trap density and energy distribution in dielectric films

摘要

Trap densities in dielectric films can be determined by tunnel injection measurements when the film is incorporated in an insulated-gate field-effect transistor (IGFET). Under applied bias to the transistor gate, carriers (electrons or holes) tunnel into traps in the dielectric film. The resulting space charge tends to change channel conductance. By feeding back a signal from the source contact to the gate electrode, channel conductance is held constant, and by recording the gate voltage as a function of time, trap density can be determined as a function of distance from the dielectric-semiconductor interface. The process is repeated with the gate bias voltage at different levels in order to determine the energy distribution of traps as a function of distance from the interface.