Perforation of insulating films on semiconductor elements - uses ion beam bombardment for material sputtering followed by wet etching

摘要

The perforation in the insulating film on a semiconductor body is carried out by ion beam bombardment. A perforated mask is applied onto the insulating film and its material is removed by sputtering caused by the bombardment through the mask openings. After the bombardment the region of the openings is subjected to wet chemical etching. The insulating film material is preferably removed up to a residual film thickness, which is greater than the mean penetration depth of the ion beam into the insulating film material. The residual film is removed by etching. If the film is completely removed by the ion beam the semi-conductor material is then removed to a greater depth than the mean ion beam penetration depth.