首页> 外国专利> Horizontal deflection circuit for electron beam - is based on pumping transistor principle and has charging capacitor in deflection circuit

Horizontal deflection circuit for electron beam - is based on pumping transistor principle and has charging capacitor in deflection circuit

机译:电子束水平偏转电路-基于泵浦晶体管原理,在偏转电路中具有充电电容器

摘要

Current from a d.c. voltage source is fed through a pumping transistor to the deflection circuit line fly-back. A supply winding of a line transformer is in series with the collector-emitter path of the pumping transistor and with a resistor connected to the d.c. voltage source. A Zener diode and a control winding of the line transformer are connected to the pumping transistor base. A charging capacitor is in the deflection circuit proper, and serves as a voltage source for connected loads. A resistor (24) is inserted between the pumping transistor (17) base and the d.c. voltage source (14) terminal (15) connected to the supply winding (1), so that, when the d.c. voltage is switched on, the pumping transistor (17) receives a starting control voltage. A diode (25) in forward direction for this current is between transistor (17) base and control winding (2). It limits the starting control voltage for transistor (17).
机译:来自直流电的电流电压源通过泵浦晶体管馈入偏转电路线反激。线路变压器的电源绕组与泵浦晶体管的集电极-发射极路径串联,并与连接至直流电的电阻器串联。电压源。齐纳二极管和线路变压器的控制绕组连接至泵浦晶体管的基极。充电电容器适当地位于偏转电路中,并用作连接负载的电压源。电阻(24)插入在泵浦晶体管(17)的基极和直流之间。电压源(14)的端子(15)连接到电源绕组(1),以便在直流电当电压接通时,抽运晶体管(17)接收启动控制电压。用于该电流的正向的二极管(25)位于晶体管(17)的基极和控制绕组(2)之间。它限制了晶体管(17)的启动控制电压。

著录项

  • 公开/公告号DE2546250A1

    专利类型

  • 公开/公告日1977-04-21

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19752546250

  • 申请日1975-10-15

  • 分类号H04N3/18;

  • 国家 DE

  • 入库时间 2022-08-23 00:04:08

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