首页> 外国专利> Macrocrystalline semiconductor strip - grown without seed crystal by gradual spread of dumb bell-shaped fushion zone in polycrystalline semiconductor strip

Macrocrystalline semiconductor strip - grown without seed crystal by gradual spread of dumb bell-shaped fushion zone in polycrystalline semiconductor strip

机译:宏晶半导体带-通过在多晶半导体带中逐渐形成哑钟形融合区而无籽晶生长

摘要

A polycrystalline semiconductor strip is converted into a macrocrystalline semiconductor strip, such as is required for solar cells, by producing a fusion zone which is narrow cf. the strip width. The fusion zone has the shape of small dumb-bells. The width of this zone is gradually extended over the full strip width as the strip is moved along under a laser beam. This method does not require any seed crystal to initiate the growth process. It is less expensive than the Czochralski method for planar material.
机译:通过产生狭窄的熔合区,将多晶半导体条转变成诸如太阳能电池所需的大晶半导体条。条带宽度。融合区呈小哑铃形。当带在激光束下移动时,该区域的宽度逐渐扩展到整个带的宽度。此方法不需要任何晶种即可启动生长过程。它比平面材料的Czochralski方法便宜。

著录项

  • 公开/公告号DE2704550A1

    专利类型

  • 公开/公告日1977-08-11

    原文格式PDF

  • 申请/专利权人 MOTOROLAINC.;

    申请/专利号DE19772704550

  • 发明设计人 WARREN GURTLERRICHARD;

    申请日1977-02-03

  • 分类号B01J17/16;

  • 国家 DE

  • 入库时间 2022-08-22 23:57:49

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