Capacitive semiconductor memory cell - has reference source selectively coupled to inversion layer forming conductive path between source

摘要

The capacitive memory element has a semiconductor substrate carrying a dielectric layer, on which conductive paths are positioned so as to define a storage node and an inversion layer, with the data signals supplied to the conductive paths. A reference source is positioned on the semiconductor substrate at a given distance from the region defining the inversion layer and means are provided for selectively coupling the reference source to the inversion layer. Pref. a conductor receiving a word pulse is used selectively to couple the reference source to the inversion layer which may itself have an inversion capacitance which is used to form a conductive path between the reference source and the inversion capacitance of the conductive paths.