Induction heating apparatus with means for improving the dv/dt capability of a silicon-controlled rectifier used therein

摘要

A gate controlled thyrister (SCR) used for switching at high frequency for induction heating is supplied with a negative bias during an interval ranging from the point where the forward current reaches to zero to the time of reapplication of a subsequent gating signal. This provides high dv/dt (the rate of rise of anode voltage) capability and small turn off time to the device.