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Technique for preparation of stoichiometric III-V compound semiconductor surfaces
Technique for preparation of stoichiometric III-V compound semiconductor surfaces
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机译:化学计量的III-V族化合物半导体表面的制备技术
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摘要
A technique for preparing stoichiometric group III-V compound semiconductor surfaces involves a repetitive anodizing and etching sequence in an aqueous solution of appropriate pH and a basic solution, respectively. Surfaces treated in the described manner evidence a correct surface stoichiometry and minimum carbon contamination.
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