Method of effecting liquid phase epitaxial growth of group III-V semiconductors

摘要

Disclosed is a method of yielding a multilayer-liquid phase epitaxial growth of Al.sub.x Ga.sub.1.sub.-x As and GaAs for manufacturing a double heterostructure laser, light emitting diode, etc., which is characterized in that hydrogen gas or inert gas, containing GaCl gas, is used as an atmosphere for the epitaxial growth. This method permits the liquid phase epitaxial growth of a semiconductor layer even on an Al.sub.x Ga.sub.1. sub.-x As (x ≧ 0.3) which is once exposed to the air or subjected to an etching treatment. Accordingly, this method is suitable for the manufacture of a semiconductor element having a buried active layer. This method also permits the manufacture of an epitaxial wafer having a low dislocation density.