Liquid phase epitaxial process for growing semi-insulating GaAs layers

摘要

Disclosed is a process for fabricating chromium-doped semi- insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the solution at a relatively low liquid phase epitaxial (LPE) deposition temperature on the order of about 750°-850° C.