Mesa transistor with epitaxial base zone - has surface edge zone of collector conductivity surrounding base zone

摘要

The transistor has a collector and an emitter zone produced in the base zone. It has an emitter-base p-n junction extending to the semiconductor chip surface. A surface edge zone of the collector zone conduction type is inserted into the base zone in the mesa grooves area. It extends up to a surface of the chip coated with a passivating insulating layer, and surrounds the base zone (3). The substrate (1a) is of n+ type and the top layer (1b) of the substrate is of type n. On top of this there is a layer (2) of type p.