Semiconductor memory element of matrix form - has orthogonal parallel rows of conductors separated from substrate by insulator and having small interspaces giving capacitor effect

摘要

The semiconductor memory element consists of a substrate (1) of doped semi-conductor material on which is an electrically insulating film, for example of silicon dioxide. The latter carries spaced adjacent strips (3, 4, 5, 6) of electrically conducting material, for example of aluminium or poly-silicon rendered conductive. Each of the conductive strips is itself covered by an insulating film, above which lie parallel strips of conductors at right angles to the embedded conductor strips forming small capacitors. The alternate rows are used for the word or bit lines of memory elements. The capacitor effect results from small lateral interfaces. Connections are made by external electrodes along the edges.