Charge coupled semiconductor device with insulating layer capacitors - has several contacts on substrate surface with adjacent majority carrier depletion zones

摘要

The capacitors of the charge coupled semiconductor device are operated by drifting pulse trains with mutually phase shifted components. The pulse application generates majority carrier depletion zones on the substrate surface, with a presettable direction of drift. Several contact (13, 14) are deposited on the substrate surface and next to each contact are formed zones (131, 141) on the surface for generating a changeable majority carrier depletion zones. The depletion zone surrounds and separates the contact from the rest of the substrate. Thus application of voltage below breakdown voltage does not cause any current flow between substrate and contact. Minority charge carriers, applied to the depletion zone, can change it in such manner as to provide a current path between substrate and contact, dependent in cross section on the minority charge carriers quantity. The original condition is reset by removal of the minority charge carriers.