Semiconductor wafer for mfr. of common collector potential transistors - has extended collector layer for several input transistors with contacting remote from base and emitter layers

摘要

The transistor wafer is intended for ECL input transistors, designed on the principle of a current transfer switch. The entire device is highly integrated and has several stacked, semiconductor layers of different conductivity and variable conductive capacity. The layers form emitter, base, and collector electrodes of the integrated transistors. The layers forming the collector electrodes lie at the bottom and are accessible from the semiconductor wafer surface at one point only, for contacting. An extensive collector layer (6), common for several input transistors, is provided. Its contacting point (2) is relatively far away from the contacting points (3, 4) of the base and emitter contacting points is provided an insulating film (10) with conductive paths on the surface.