首页> 外国专利> Microwave oscillator circuit with Gunn or IMPATT diode - has diode in cavity resonator to produce continuous or pulsed millimetre waves

Microwave oscillator circuit with Gunn or IMPATT diode - has diode in cavity resonator to produce continuous or pulsed millimetre waves

机译:带有Gunn或IMPATT二极管的微波振荡器电路-空腔谐振器中具有二极管,可产生连续或脉冲毫米波

摘要

The microwave oscillator has a negative impedance device, e.g. a Gunn or IMPATT diode. The diode is located in a cavity resonator and produces continuous or pulsed millimeter waves of e.g. 35 GHz. The diode (4) is located in the centre of a normal section of waveguide acting as a cavity resonator. There is a filter resonator (2) which prevents power passing out via the DC supply line of the diode. An impedance transformer (3) is located on the opposite side to the diode earth connection to match the diode to the cavity resonator.
机译:微波振荡器具有负阻抗器件,例如,负阻抗器件。耿氏或IMPATT二极管。二极管位于空腔谐振器中,并产生连续的或脉冲的毫米波,例如,毫米波。 35 GHz。二极管(4)位于用作空腔谐振器的波导的正常部分的中心。有一个滤波器谐振器(2),可防止功率通过二极管的直流电源线流出。阻抗变压器(3)位于二极管接地连接的相对侧,以使二极管与腔谐振器匹配。

著录项

  • 公开/公告号DE2709210A1

    专利类型

  • 公开/公告日1978-09-07

    原文格式PDF

  • 申请/专利权人 LICENTIA PATENT-VERWALTUNGS-GMBH;

    申请/专利号DE19772709210

  • 发明设计人 LINDNERKURTDIPL.-ING.;

    申请日1977-03-03

  • 分类号H03B7/14;

  • 国家 DE

  • 入库时间 2022-08-22 21:58:18

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