Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon

摘要

Conducting layers based on Al are formed on at least one active surface of a device comprising a semiconductor substrate obtd. by the planar method, are made by first forming an electrically insulating layer except in the contact forming zones, then simultaneously depositing over the whole active surface a layer of Al/Si alloy contg. at least a third metal selected from Fe, Cr, Mg, Cu, Mn and/or Ni, then covering the active surface with a mask inert to anodisation at the regions where contacts and interconnection are to be formed and finally anodising to oxidise the unprotected parts of the alloy coating.