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dosimeter of the fast neutrons has a high impact a pin diode to the silicon

机译:快速中子的剂量计对硅引脚二极管有很大的影响

摘要

P & this process relates to the adjustment and the improvement of the sensitivity of silicon pin diodes to damage by the fast neutrons. / p & & p & the method consists in selecting a mass based on silicon of the material of type n or p at a high resistivity, having a relatively long period of life of the minority carriers, exceeding 250 microseconds. no, to form the junctions of type n * * * * p + and + and to arrange the mass of the dosimeters, so as to obtain a pin diode to the silicon with a previously chosen from the area bordante to the volume. / p & & p & a dosimeter for personnel to pin diode to the silicon, which is sensitive to a level corresponding to a dose of radiation absorbed as low as 0,1 rads, has a sensitivity of at least 10 mv / rad in the range between 0,1 rads and 10 rads. / p
机译:

该过程涉及硅销二极管对快速中子破坏的敏感性的调整和提高。 & &该方法包括选择具有高电阻率的基于n型或p型材料的硅的物质,该少数物质具有相对较长的少数载流子寿命,超过250微秒。否,以形成n * * * * p +和+类型的结,并排列剂量计的质量,从而获得从硅酸盐面积到体积的预先选择的硅引脚二极管。 & &用于人员将二极管固定到硅的剂量计,该剂量计的敏感度对应于低至0.1 rads吸收的辐射剂量,在0.1 rads范围内的灵敏度至少为10 mv / rad和10拉德。

著录项

  • 公开/公告号FR2385106A1

    专利类型

  • 公开/公告日1978-10-20

    原文格式PDF

  • 申请/专利权人 HARSHAW CHEMICAL CO;HARSHAW CHEMICAL CY;

    申请/专利号FR19780008112

  • 发明设计人

    申请日1978-03-21

  • 分类号G01T3/08;H01L31/00;

  • 国家 FR

  • 入库时间 2022-08-22 21:41:35

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