A process is described for putting down patterned chromate films on metal substrates. The procedure involves first forming a chromate film on the metal surface and then forming the patterned chromate film. The pattern is formed by sputtering the substrate through a suitable shadow mask. This procedure yields patterned chromate films with high dimensional tolerance limits. Such patterns are particularly useful in the fabrication of electronic artifacts, as for example, a mask in gold plating processes.
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