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Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same
Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same
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机译:单一有源元件控制反转半导体存储单元装置及采用其的存储矩阵
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摘要
Semiconductor storage switching circuits and integrated circuit storage array devices that employ them are characterized by the fact that each individual cell of the storage array requires only a single active device, each such active device consisting of a three terminal, controlled-inversion device of metal, non-linear resistor, and semiconductor layers, the active device having controllable switching characteristics through the use of silicon dioxide, polycrystalline silicon, or nitrides of silicon in its non-linear resistive layer. Control circuits associated with the memory arrays make possible the unique selection of any one predetermined cell to write, erase, or read its content. Grounded base and grounded emitter forms of the storage devices are provided, as well as random access memory devices.
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