Single crystal growth in HF heated crucible - with rod-like seed crystal at bottom below waisted restriction

摘要

Single crystals are produced from a binary cpd., such as a gp. III-gp. V cpd. semiconductor, by growing it in the melt of a first component in a crucible. The second component is present in the vapour phase and is dissolved in the melt to diffuse to the already formed crystal. The growth is initiated by a rod-shaped seed crystal which is contained at the bottom of the crucible below a waisted restriction. This produces single crystals with an extremely high perfection. They are suitable for the prodn. of light-emitting diodes of high light yield.