A method of reducing radiation damage in the production of n - doped silicon by means of neutron irradiation

摘要

the invention, therefore, the task was based on a dotierverfahren for silicon on the basis of the neutroneninduzierten transmutation of silicon in phosphorus, to find the kristallperfektion of the material so far maintained that, even without zwischengeschobene aufwe ndige temperprozesse, especially at high temperatures above 1.000 degrees c as the basic material for semiconductor devices best quality can be used.solve this task is that the higher the intended specific resistance of the irradiated silicon, the lower the number phosphoratome and thus the absorbed neutron dose to a so hoeheres relationship of thermal to fast neutrons in the b estrahlte siliciumwerkstueck penetrating neutron flux will be discontinued.according to the invention in certain dose ranges for only certain proportions of fast neutrons admitted, what appropriate moderator in the reactor is realized. this is the higher zielwiderstaenden increasingly stoerende influence by the fast neutrons induced strahlenschaeden is reduced to an acceptable level....u.s.w