Device semi - driver has the effect of the field of the type a grid isolee, using this device and method of manufacturing the latter

摘要

P device semi - driver of the type igfet. / p & & p & this device comprises a substrate semiconductor - driver of a first type of conductivity, which comprises a main surface, a pair of semi - conductive regions of the first and second regions semi - conductors of a second type of conductivity opposite to the first formed in the substrate and extending as far as its main surface, a third region, a semi conducting - of the second type of conductivity which is adjacent to the second region, this third region is also formed in the substrate and also extending as far as its main surface and this so as to surround the second region, the said third region having a concentration of impurities of less than those of the first and second regions, a fourth semi - conductive region of the second type of conductivity which is adjacent to the third region and is formed partially in said main surface between the third and the first region, the fourth region having a concentration of impurities still lower than that of the third region and a thickness less than those of the first and second regions, an insulating film formed on the main surface, of the substrate surface extending between the fourth and the first region and a gate formed on the insulating film so as to cover the surface of the substrate between the fourth and the first regions. / p & & p & particular application to the amplifiers. / p