Memory a semi - conductors has direct access dynamic and cell has vertical dynamic load transfer for such a memory

摘要

P dynamic ram with cells to elements stacked vertically and the charge and discharge of capacitor by vertical transfer. / p & & p & at the upper surface of a substrate semiconductor - conductor is diffused a channel of impurity opposite to that of the substrate in order to form the driver of a bit of the memory. An epitaxial layer formed on the surface embedded the driver of a bit, a box of the insulation of the channel is broadcast in the epitaxial layer to contain the active zone of the cell and an insulating layer, placed on the surface of the epitaxial layer, receives a conductive strip to form the driver of a word of the memory. / p & & p & application to the manufacture of memories semi-conductor - conductors to direct access. / p