Configurations of memory cells of the superconducting making it possible to avoid the passage is wrongly of a current of a half - selection, in the cells not collecting zone

摘要

P cells of memoires collecting zone by a half -. & / p & & p & a device commutablej5 is mounted in series with each cellulea - d. A path of courant21 makes it possible to shunt the dispositifj5 while a part can be electromagnetically with the device commandablej1 of each cell. / p & & p & which can be used for the embodiment of memoires non destructive a josephson effect. / p