首页> 外国专利> ELECTRON BEAM PLATE MAKING METHOD BY VAPOR PHASE FILM FORMATION AND VAPOR PHASE DEVELOPMENT

ELECTRON BEAM PLATE MAKING METHOD BY VAPOR PHASE FILM FORMATION AND VAPOR PHASE DEVELOPMENT

机译:汽相膜形成和汽相显影的电子束板制备方法

摘要

PURPOSE:To make a plate making process continuous and clean and enhance the reliability of plate making by forming a resist film on the surface of a substrate in vapor phase in a vacuum container and developing the film in vapor phase after exposure. CONSTITUTION:A substrate is set in a discharge vacuum container, and after filling the container with an inert gas such as argon of about 0.5-1 Torr discharge is induced. A monomer such as methyl acrylate is introduced into the container and polymerized on the substrate to form an about 0.2-1.5mu thick resist film. This film is irradiated with electron beams in the form of a desired pattern, and the irradiated portion of the polymer is decomposed. The container is then filled with a corrosive gas such as CCl, of 10-2-10-3 Torr, discharge is induced, and the film is developed by plasma etching to make a plate.
机译:目的:通过在真空容器中在气相上的基板表面上形成抗蚀剂膜,并在曝光后以气相显影该膜,以使制版过程连续,清洁并提高制版的可靠性。组成:将基板放置在放电真空容器中,并在容器中填充惰性气体(例如约0.5-1 Torr的氩气)后,将引起放电。将诸如丙烯酸甲酯之类的单体引入容器中并在基材上聚合以形成约0.2-1.5μ厚的抗蚀剂膜。用所需图案形式的电子束辐照该膜,并且聚合物的辐照部分分解。然后,向容器填充腐蚀性强的气体,例如10 -2 -10 -3托的CCl等腐蚀性气体,引起放电,并通过等离子蚀刻使膜显影以制成板。

著录项

  • 公开/公告号JPS55129345A

    专利类型

  • 公开/公告日1980-10-07

    原文格式PDF

  • 申请/专利权人 ULVAC CORP;

    申请/专利号JP19790036307

  • 发明设计人 MORITA SHINZOU;HATSUTORI SHIYUUZOU;

    申请日1979-03-29

  • 分类号G03C1/74;G03F7/039;G03F7/16;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 19:03:02

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