halfgeleiderinrichting containing a semiconductor body with two separated parts of a halfgeleiderschakelelement, adjacent to the upper surface of the halfgeleiderlichaam,and an insulating layer of the surface of the halfgeleiderlichaam separated electrically conductive layer between the two parts.

摘要

A semiconductor device is described containing at least two insulating gate field effect transistors in a common wafer. One of the transistors exhibits high gain but the other transistor exhibits low gain as a result of selectively implanting into its channel neutral ions and crystal damage which reduce the effective mobility of charge carriers therein. In one embodiment, the low gain transistor serves as a load for the high gain transistor. In a second embodiment, the low gain transistor is a parasitic transistor formed between adjacent circuit elements.