Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration

摘要

In the method for growing epitaxial layers on selectively highly doped silicon substrates, the substrate is first heated in a hydrogen atmosphere in the range between about 1120 and about 1180 ° C a specified time, then cooled to a temperature in the range between about 1000 and about 1100 ° C and finally exposed to a gas stream containing hydrogen gas as a carrier and silicon tetrachloride as a source material for the silicon. The epitaxial layer grows.; With the method of epitaxial layers are produced preferably, soft 2 microns thick and are used in very large scale integrated circuits.