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Reducing resistance temp. coefft. of film resistance - by coating cermet film with resistance on insulator with protective insulator film
Reducing resistance temp. coefft. of film resistance - by coating cermet film with resistance on insulator with protective insulator film
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机译:降低电阻温度系数。膜电阻的测量-通过在绝缘体上用保护性绝缘膜覆盖电阻金属陶瓷膜
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摘要
Resistance temp. coefft. of film resistance consisting of an insulator substrate and a cement film resistance coating is reduced by applying a protective film (I) of insulator to surface of cermet film. (I) consists of metal oxide(s), e.g. SiO, Al2O3, ZrO2 or Ce oxide. Application of (I) can reduce resistance temp. coefft. from -200 to +50 ppm/degrees C. It can be applied by a cheaper process than used in spray-coating substrate with Ta nitride. The substrate may consist of glass or Al2O3 and cermet film of 60-40 wt. % Cr and 40-60 wt. % SiO. Thickness of cermet film may be 0.08-2 mu and thickness of (I) may be 0.03-1.5 mu.
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