首页> 外国专利> Reducing resistance temp. coefft. of film resistance - by coating cermet film with resistance on insulator with protective insulator film

Reducing resistance temp. coefft. of film resistance - by coating cermet film with resistance on insulator with protective insulator film

机译:降低电阻温度系数。膜电阻的测量-通过在绝缘体上用保护性绝缘膜覆盖电阻金属陶瓷膜

摘要

Resistance temp. coefft. of film resistance consisting of an insulator substrate and a cement film resistance coating is reduced by applying a protective film (I) of insulator to surface of cermet film. (I) consists of metal oxide(s), e.g. SiO, Al2O3, ZrO2 or Ce oxide. Application of (I) can reduce resistance temp. coefft. from -200 to +50 ppm/degrees C. It can be applied by a cheaper process than used in spray-coating substrate with Ta nitride. The substrate may consist of glass or Al2O3 and cermet film of 60-40 wt. % Cr and 40-60 wt. % SiO. Thickness of cermet film may be 0.08-2 mu and thickness of (I) may be 0.03-1.5 mu.
机译:电阻温度系数。通过将绝缘体的保护膜(I)施加到金属陶瓷膜的表面,减少了由绝缘体基板和水泥膜电阻涂层组成的膜电阻的降低。 (I)由一种或多种金属氧化物组成,例如SiO,Al2O3,ZrO2或Ce氧化物。使用(I)可以降低电阻温度。系数。 -200至+50 ppm /℃。与氮化钽喷涂相比,可通过更便宜的方法进行涂覆。基底可以由玻璃或Al 2 O 3和60-40wt。%的金属陶瓷膜组成。 %Cr和40-60 wt。 SiO%金属陶瓷膜的厚度可以为0.08-2μ,(I)的厚度可以为0.03-1.5μ。

著录项

  • 公开/公告号DE2719045B2

    专利类型

  • 公开/公告日1979-12-20

    原文格式PDF

  • 申请/专利权人 NIPPON KOGAKU K.K. TOKIO;

    申请/专利号DE19772719045

  • 发明设计人 MATSUURA MASAAKI;KUMANO SHIGEAKI;

    申请日1977-04-28

  • 分类号H01C7/06;

  • 国家 DE

  • 入库时间 2022-08-22 17:38:48

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