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Rate of change of current limitation circuit for transistor - has load current premagnetised saturable choke which is unsaturated when freewheeling diode current is zero

机译:晶体管限流电路的变化率-具有负载电流预磁化的饱和扼流圈,当续流二极管电流为零时,该扼流圈不饱和

摘要

The rate of change of current in an h.v. transistor operating at a high frequency can be limited by including a saturable choke (Lb) which is magnetically biased by the load current. This bias is arranged so that the choke is unsaturated when the current through the freewheel diode (F) across the load reaches zero. The choke (Lb) may be additional to the normal limiting choke (La). The operation of the load current biased choke is to reduce the transient voltages on the diode. As the additional choke acts to protect the diode the latter need no longer have an RC snubber circuit in parallel and thus the efficiency of the circuit is improved.
机译:h.v.中的电流变化率可以通过包含一个可饱和的扼流圈(Lb)来限制在高频下工作的晶体管,该扼流圈受负载电流的磁偏置。设置该偏置,以使流经负载的续流二极管(F)的电流达到零时,扼流圈不饱和。扼流圈(Lb)可能是正常极限扼流圈(La)的附加项。负载电流偏置扼流圈的工作是​​减少二极管上的瞬态电压。由于附加的扼流圈起到保护二极管的作用,二极管不再需要并联并联RC缓冲电路,从而提高了电路效率。

著录项

  • 公开/公告号DE2829840A1

    专利类型

  • 公开/公告日1980-01-17

    原文格式PDF

  • 申请/专利权人 RONAWOLFGANGDIPL.-ING.;

    申请/专利号DE19782829840

  • 发明设计人 RONAWOLFGANGDIPL.-ING.;

    申请日1978-07-07

  • 分类号H02H9/02;H03K17/04;

  • 国家 DE

  • 入库时间 2022-08-22 17:36:39

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